Path:okDatasheet > Semiconductor Datasheet > Diodes Datasheet > Diodes-73

A P4KE68C TB3500L TZX2V4A 1N5252B 1N4738A MBR745 RS603 SBG2040CT UF1501S ZM4760A BS817 SBL1050CT 1N4148W-7 SR106 1.5KE20CA MBRD1040CT BC858C P6KE62CA DDTC115ECA DDTC115GE DZ23C12 MMSZ5236BS TZX7V5 2A05G D1G MMBZ5234BS PR1001G

Diodes dataark Catalog-73

Part NoProdusentApplikasjon
DF10M Diodes1000V; 1.0A glass passivated bridge rectifier
TZX3V0A Diodes2.8-3.0V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
P4KE47A Diodes40.20V; 400W transient voltage suppressor
P4KE68C Diodes55.10V; 400W transient voltage suppressor
TB3500L Diodes320V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TZX2V4A Diodes2.3-2.5V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
1N5252B Diodes24V; 500mW epitaxial zener diode
1N4738A Diodes8.2V; 1W zener diode
MBR745 Diodes45V; 7.5A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application
RS603 Diodes200V; 6.0A bridge rectifier
SBG2040CT Diodes40V; 20A surface mount schottky barrier diode. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
UF1501S Diodes50V; 1.5A ultra-fast rectifier
ZM4760A Diodes68V; 1W surface mount zener diode
BS817 Diodes200V; P-channel enchancement mode field effect transistor
SBL1050CT Diodes50V; 10A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
1N4148W-7 Diodes100V; 300mA NPN surface mount fast switching diode
SR106 Diodes60V; 25A high current schottky barrier rectifier. Guard ring for transient protection
1.5KE20CA Diodes17.10V; 1500W transient voltage suppressor
MBRD1040CT Diodes40V; 5A surface mount dual schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
BC858C Diodes30V; PNP surface mount small signal transistor. For switching and AF amplifier applications
P6KE62CA Diodes53.00V; 600W- bidirectional transient voltage suppressor
DDTC115ECA Diodes50V; 20mA NPN PRE-biased small signal surface mount transistor
DDTC115GE Diodes50V; 100mA NPN PRE-biased small signal surface mount transistor
DZ23C12 Diodes11.4-12.7V; 300mW surface mount zener diode. Ideally suited for automatic insertion
MMSZ5236BS Diodes7.5V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes
TZX7V5 Diodes7.0-7.9V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
2A05G Diodes600V; 2.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
D1G Diodes50V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
MMBZ5234BS Diodes6.2V; 200mW surface mount zener diode. Ideally suited for automated assembly processes
PR1001G Diodes50V; 1.0A fast recovery glass passivated rectifier; fast switching for high efficiency

<< 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 >>