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-20 L8933-41 P1201-01 L7551-22 R8520-00-C12 L6303 R5900U-00-M4 P1082-03 B7506-01 H8711 L8933-04 H7827-002 E1168-17 C7884-21 C9068 C4710-51 H7732P-10 L5431 C5964-0800 L7296-50 C4710-50 C2719 P4245 P6606-110 P3872 C2281 G1740 R3991

Hamamatsu dataark Catalog-3

Part NoProdusentApplikasjon
P5274-01 HamamatsuAllowable current20mA; MCT photoconductive detector dewar type detector with high sensitivity and high-speed response in long wavelength range
P7163 Hamamatsu0.5V; InAs photovoltaic detector high-speed, low noise photovoltaic IR detector
E1168-20 HamamatsuMax voltage2.3kV; diameter 6.15mm; housing, power and singal cables, connector adapter
L8933-41 Hamamatsu0.6-2.2W; 2V; CW laser diode high optical power from a single chip
P1201-01 HamamatsuSupply voltage100Vdc; 70mW; CdS photoconductive cell resin coating type. Standard type designed for general purpose, wide application
L7551-22 Hamamatsu2V; 0.2mW; laser diode repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
R8520-00-C12 HamamatsuSpectral responce300-650nm; between anode and cathode1000Vdc; 0.1mA; position sensitive photomultiplier tube
L6303 Hamamatsu30W; L2D2 lamps deuterium lamp
R5900U-00-M4 HamamatsuSpectral responce300-650nm; between anode and cathode900Vdc; 0.1mA; multianode photomultiplier tube
P1082-03 HamamatsuSupply voltage100Vdc; 70mW; CdS photoconductive cell resin coating type. Standard type designed for general purpose, wide application
B7506-01 HamamatsuActive area size4.6mm; extended input voltage+-15V; infrared detector mudule with preamp non-cooled type easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection
H8711 HamamatsuSpectral responce300 to 650nm; supplu voltage 1000V; multianode photomultiplier tube assembly
L8933-04 Hamamatsu0.6-2.2W; 2V; CW laser diode high optical power from a single chip
H7827-002 HamamatsuInput voltage 11.5-15.5V; max input current40mA; compact head-on PMT photosensor module
E1168-17 HamamatsuMax voltage2.3kV; diameter 6.2mm; housing, power and singal cables, connector adapter
C7884-21 HamamatsuSupply voltage +-12/+-15V; driver circuit for NMOS linear image sensor
C9068 HamamatsuSupply voltage +18V; PSD signal processing circuit digital output for connection with PC
C4710-51 HamamatsuInputV +12V; 120mA; high voltage power supply unit
H7732P-10 HamamatsuInput voltage 11.5-15.5V; max input current40mA; compact side-on PMT photosensor module
L5431 Hamamatsu575W; metal halide lamp short-arc type
C5964-0800 HamamatsuPixel size50(H) x 2500(V); number of pixels256; supply voltage -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor
L7296-50 Hamamatsu30W; L2D2 lamps deuterium lamp
C4710-50 HamamatsuInputV +15V; 95mA; high voltage power supply unit
C2719 HamamatsuSupply voltage+-9V; current-to-voltage conversion photosensor amplifier for weak photocurrent with low noise
P4245 HamamatsuActive area size3x3mm; extended input voltage+-15V; infrared detector mudule with preamp non-cooled type easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection
P6606-110 HamamatsuActive area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P3872 HamamatsuSupply voltage400Vdc; 300mW; CdS photoconductive cell hermetically sealed for high reliability
C2281 HamamatsuSupply voltage+-9V; Si photodiode with BNC connector
G1740 HamamatsuActive area size5.7x5.6mm; reverse voltage5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification
R3991 HamamatsuSpectral responce300-650nm; between anode and cathode1800Vdc; 0.02mA; photomultiplier tube

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