Path:OKDatasheet > Semiconductor Datasheet > Hexawave Datasheet
Keyword: Hexawave Datasheet, Hexawave Data Sheet, Hexawave Datasheets, Hexawave Inc
Hexawave Datasheet Search Siste Hexawave dataark
For å finne spesifikke Hexawave IncDatasheet, søk okDatasheet av delenummer eller komponent beskrivelse. Du vil bli presentert med en liste over alle mulige deler med Hexawave datablader. Klikk på et av de oppførte elektronisk komponent for å se flere detaljer inkludert eventuelle spesifikasjoner.
Hexawave offisielle nettsted
Siste Hexawave Produktark PDF
| Part No | Applikasjon |
|---|---|
| HWS306 | GaAs MMIC SPDT switch |
| HWC34NC | 12 W C-band power FET non-via hole chip |
| HWS301 | GaAs MMIC SPDT switch |
| HWS303 | GaAs MMIC SPDT switch |
| HWL30YRA | 6 W L-band GaAs power FET |
| HWL34NC | 12 W L-band power FET non-via hole chip |
| HWF1687RA | 7.5 W L-band GaAs power FET |
| HWL34YRF | 12 W L-band GaAs power FET |
| HWL26NPA | 2 W L-band GaAs power FET |
| HWF1682RA | 20 W L-band GaAs power FET |
| HWS2352 | GaAs MMIC SPDT terminated switch |
| HWC27YC | 3.5 W C-band power FET via hole chip |
| HWL34YRA | 12 W L-band GaAs power FET |
| HWL30NPA | 2.8 W L-band GaAs power FET |
| HWS305 | GaAs MMIC SPDT switch |
| HWL30YRF | 6 W L-band GaAs power FET |
| HWL27YRA | 3.5 W L-band GaAs power FET |
| HWL27NC | 3.5 W L-band power FET via hole chip |
| HWF1686NC | 3.5 W L-band power FET non-via hole chip |
| HWL26YC | 1.7 W L-band power FET via hole chip |
| HWL23NPB | 0.7 W L-band GaAs power FET |
| HWL36YRA | 15 W L-band GaAs power FET |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL36YRF | 15 W L-band GaAs power FET |
| HWC27NC | 3.5 W C-band power FET non-via hole chip |
Hexawave Profil
Hexawave, Inc. was established in 1991 with the goal of serving the rapidly growing wireless communication industry. The company is dedicated to developing, manufacturing, and marketing a wide range of GaAs based RF products. Headquartered in Hsinchu Science-Based industrial Park, the high-tech center of Taiwan, Hexawave has a 35,000 square ft. facility, which includes a class 100 GaAs wafer fab line, assembly and testing facility.
Hexawave Incdataark Catalog
1 2