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I120 IRF7807D1 ST1900C50R2 ST230S08P2L 301URA80 IRF7604 IRFRC20 ST180S12P0VL ST3230C10R1 SD300N32MC SD300R12MBC IR2110L6 SD203R20S10PSC SD1053C18S20L 309UA160P3 IRFP27N60K ST203S10MFJ0L SD103R25S10MC IRFB13N50A SD103R20S10MBC SD153R08S15MV IRFR4105TRL IRF140 IRG4RC20F SD103N25S15

IR dataark Catalog-158

Part NoProdusentApplikasjon
SD253N08S20MSV IRFast recovery diode
111RKI120 IRPhase control thyristor
IRF7807D1 IRFETKY MOSFET and schottky diode. VDS = 30V, RDS(on) =25mOhm
ST1900C50R2 IRPhase control thyristor
ST230S08P2L IRPhase control thyristor
301URA80 IRStandard recovery diode
IRF7604 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.09 Ohm.
IRFRC20 IRHEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A
ST180S12P0VL IRPhase control thyristor
ST3230C10R1 IRPhase control thyristor
SD300N32MC IRStandard recovery diode
SD300R12MBC IRStandard recovery diode
IR2110L6 IRHigh and low side driver
SD203R20S10PSC IRFast recovery diode
SD1053C18S20L IRFast recovery diode
309UA160P3 IRStandard recovery diode
IRFP27N60K IRHEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A
ST203S10MFJ0L IRInverter grade thyristor
SD103R25S10MC IRFast recovery diode
IRFB13N50A IRHEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
SD103R20S10MBC IRFast recovery diode
SD153R08S15MV IRFast recovery diode
IRFR4105TRL IRN-channel power MOSFET for fast switching applications, 55V, 27A
IRF140 IRRepetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A.
IRG4RC20F IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A
SD103N25S15PBC IRFast recovery diode
IRFD120 IRHEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.27 Ohm, ID = 1.3 A
SD203N25S20MBC IRFast recovery diode
47LFR60 IRStandard recovery diode
309UA80P4 IRStandard recovery diode

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