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1G ZMM5245C ES2D 3EZ18D2 KBU1006G SMAJ160 1N5943D 1N4742 SMBJ5915D S3M SMAJ30C 3EZ10D4 P4KE350C 1N4002L 1N5949D KBPC301G 1N970B ZMM55-C43 ZMM55-C36 1N4106D P4KE11A 1N5542A P4KE27CA ZMM5246C SMAJ30 3EZ150D1 SMBJ5937C FR203G

JGD dataark Catalog-18

Part NoProdusentApplikasjon
SMAJ64 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V.
SMBJ64C JGDSurface mount transient voltage suppressor. Breakdown voltage 71.1 V (min), 86.9 V (max). Test current 1.0 mA. Bidirectional.
KBU801G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V.
ZMM5245C JGDSurface mount zener diode. Nominal zener voltage 15 V. Test current 8.5 mA. +-10% tolerance.
ES2D JGD2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 200 V.
3EZ18D2 JGD3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-2% tolerance.
KBU1006G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V.
SMAJ160 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V.
1N5943D JGD1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-1% tolerance.
1N4742 JGD1W zener diode. Nominal zener voltage 12V. 10% tolerance.
SMBJ5915D JGD1.5W silicon surface mount zener diode. Zener voltage 3.9 V. Test current 96.1 mA. +-1% tolerance.
S3M JGDSurface mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 3.0 A.
SMAJ30C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. Bidirectional.
3EZ10D4 JGD3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-4% tolerance.
P4KE350C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional.
1N4002L JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 100V.
1N5949D JGD1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance.
KBPC301G JGDSingle phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V.
1N970B JGD0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-5% tolerance.
ZMM55-C43 JGDSurface mount zener diode, 500mW. Nominal zener voltage 40-46 V. Test current 2.5 mA. +-5% tolerance.
ZMM55-C36 JGDSurface mount zener diode, 500mW. Nominal zener voltage 34-38 V. Test current 5 mA. +-5% tolerance.
1N4106D JGD500mW low noise silicon zener diode. Nominal zener voltage 12V. 1% tolerance.
P4KE11A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V.
1N5542A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-10% tolerance.
P4KE27CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. Bidirectional.
ZMM5246C JGDSurface mount zener diode. Nominal zener voltage 16 V. Test current 7.8 mA. +-10% tolerance.
SMAJ30 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V.
3EZ150D1 JGD3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-1% tolerance.
SMBJ5937C JGD1.5W silicon surface mount zener diode. Zener voltage 33 V. Test current 11.4 mA. +-2% tolerance.
FR203G JGD2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V.

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