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10 1N5543D HER203 SMAJ100A ZMM5227C FR606 3EZ20D3 P4KE91 IN5401 SF12LG SMBJ48CA SMAJ43C R1800F SMBJ90CA 3EZ150D S1A SMBJ6.0C 1N5540C HER306G ZMM5251D 1N5528 SMAJ7.5A ZMM55-C5V6 FR602 SMBJ30 1N4758D P4KE33C 1N5926C

JGD dataark Catalog-25

Part NoProdusentApplikasjon
SMBJ150 JGDSurface mount transient voltage suppressor. Breakdown voltage 167 V (min), 204 V (max). Test current 1.0 mA.
1W08G JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V.
KBPC1010 JGDSingle phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V.
1N5543D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-1% tolerance.
HER203 JGD2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 200V.
SMAJ100A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V.
ZMM5227C JGDSurface mount zener diode. Nominal zener voltage 3.6 V. Test current 20 mA. +-10% tolerance.
FR606 JGD6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 800V.
3EZ20D3 JGD3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-3% tolerance.
P4KE91 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V.
IN5401 JGD3.0 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
SF12LG JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
SMBJ48CA JGDSurface mount transient voltage suppressor. Breakdown voltage 53.3 V (min), 58.9 V (max). Test current 1.0 mA. Bidirectional.
SMAJ43C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V. Bidirectional.
R1800F JGDHigh voltage fsat recovery rectifier. Max recurrent peak reverse voltage 1800 V. Max average forward rectified current 0.5A.
SMBJ90CA JGDSurface mount transient voltage suppressor. Breakdown voltage 100 V (min), 111 V (max). Test current 1.0 mA. Bidirectional.
3EZ150D JGD3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-20% tolerance.
S1A JGDSurface mount rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A.
SMBJ6.0C JGDSurface mount transient voltage suppressor. Breakdown voltage 6.67 V (min), 8.15 V (max). Test current 10.0 mA. Bidirectional.
1N5540C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-2% tolerance.
HER306G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
ZMM5251D JGDSurface mount zener diode. Nominal zener voltage 22 V. Test current 5.6 mA. +-20% tolerance.
1N5528 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-20% tolerance.
SMAJ7.5A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V.
ZMM55-C5V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-5% tolerance.
FR602 JGD6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V.
SMBJ30 JGDSurface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 40.7 V (max). Test current 1.0 mA.
1N4758D JGD1W zener diode. Nominal zener voltage 56V. 1% tolerance.
P4KE33C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. Bidirectional.
1N5926C JGD1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-2% tolerance.

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