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4122D ZMM5240D SF15LG MR852 P4KE20 KBP202 SMAJ100 S2K SR240 FR106G 1N5935C SMAJ160C BZX84C13 KBJ408G 1N4127 3EZ180D2 SMBJ43CA 1N5532C IN5400 1N979D 3EZ150D2 SR230 KBU600 KBPC1006 1N5524D MMBD1702 SMAJ20 SMAJ15C

JGD dataark Catalog-33

Part NoProdusentApplikasjon
UF5408G JGDGlass passivated ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 3.0 A.
SMBJ5942A JGD1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance.
1N4122D JGD500mW low noise silicon zener diode. Nominal zener voltage 36V. 1% tolerance.
ZMM5240D JGDSurface mount zener diode. Nominal zener voltage 10 V. Test current 20 mA. +-20% tolerance.
SF15LG JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A.
MR852 JGD3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V.
P4KE20 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V.
KBP202 JGDSingle-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V.
SMAJ100 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V.
S2K JGDSurface mount rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.5 A.
SR240 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 2.0 A.
FR106G JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V.
1N5935C JGD1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance.
SMAJ160C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional.
BZX84C13 JGD350mW zener diode, 13V
KBJ408G JGDGlass passivated single-phase bridge rectifier. Forward current 4.0 A. Max recurrent peak reverse voltage 800V.
1N4127 JGD500mW low noise silicon zener diode. Nominal zener voltage 56V.
3EZ180D2 JGD3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-2% tolerance.
SMBJ43CA JGDSurface mount transient voltage suppressor. Breakdown voltage 47.8 V (min), 52.8 V (max). Test current 1.0 mA. Bidirectional.
1N5532C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-2% tolerance.
IN5400 JGD3.0 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
1N979D JGD0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-1% tolerance.
3EZ150D2 JGD3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-2% tolerance.
SR230 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 2.0 A.
KBU600 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V.
KBPC1006 JGDSingle phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V.
1N5524D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance.
MMBD1702 JGDSurface mount switching diode.
SMAJ20 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V.
SMAJ15C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional.

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