Path:okDatasheet > Semiconductor Datasheet > JGD Datasheet > JGD-55

4 1N5954 ZMM5253B 3EZ20D2 KBPC306 1N5531A SMBJ5932B 1N5536B ZMM5254A 1N974D SMAJ36 SMBJ18 BZX84C12 HER107G 3EZ7.5D5 P4KE51C ZMM5255D P4KE150A ZMM55-C33 F1A2G KBPC1000G SMBJ85 1N5926B KBJ406G SMAJ5.0 3EZ82D5 1N5543 P4KE68CA

JGD dataark Catalog-55

Part NoProdusentApplikasjon
SR2A0 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A.
1N4107D JGD500mW low noise silicon zener diode. Nominal zener voltage 13V. 1% tolerance.
3EZ19D4 JGD3 W, silicon zener diode. Nominal voltage 19 V, current 40 mA, +-4% tolerance.
1N5954 JGD1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance.
ZMM5253B JGDSurface mount zener diode. Nominal zener voltage 25 V. Test current 5.0 mA. +-5% tolerance.
3EZ20D2 JGD3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-2% tolerance.
KBPC306 JGDSingle phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V.
1N5531A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-10% tolerance.
SMBJ5932B JGD1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-5% tolerance.
1N5536B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance.
ZMM5254A JGDSurface mount zener diode. Nominal zener voltage 27 V. Test current 4.6 mA. +-3% tolerance.
1N974D JGD0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-1% tolerance.
SMAJ36 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V.
SMBJ18 JGDSurface mount transient voltage suppressor. Breakdown voltage 20.0 V (min), 24.4 V (max). Test current 1.0 mA.
BZX84C12 JGD350mW zener diode, 12V
HER107G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V.
3EZ7.5D5 JGD3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-5% tolerance.
P4KE51C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional.
ZMM5255D JGDSurface mount zener diode. Nominal zener voltage 28 V. Test current 4.5 mA. +-20% tolerance.
P4KE150A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V.
ZMM55-C33 JGDSurface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-5% tolerance.
F1A2G JGD1.0 A glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100 V.
KBPC1000G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.
SMBJ85 JGDSurface mount transient voltage suppressor. Breakdown voltage 94.4 V (min), 115 V (max). Test current 1.0 mA.
1N5926B JGD1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-5% tolerance.
KBJ406G JGDGlass passivated single-phase bridge rectifier. Forward current 4.0 A. Max recurrent peak reverse voltage 600V.
SMAJ5.0 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V.
3EZ82D5 JGD3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-5% tolerance.
1N5543 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-20% tolerance.
P4KE68CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional.

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