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EZ56D 1N973C KBU808G FS1D SMAJ33C 1N984B HER308G 1N5397 SMBJ45C 3EZ39D10 SMAJ7.0CA 1N959A 1N4002G SFA12G 1N5946A HER154 ZMM55-A3V0 1N4007 3EZ8.2D10 SMAJ48A P6KE8.2A P4KE15CA 1N4622 1N5399 1N976 ZMM55-A3V6 FS2K 1N4128

JGD dataark Catalog-56

Part NoProdusentApplikasjon
P6KE30C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional.
ZMM55-B8V2 JGDSurface mount zener diode, 500mW. Nominal zener voltage 7.7-8.7 V. Test current 5 mA. +-2% tolerance.
3EZ56D JGD3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-20% tolerance.
1N973C JGD0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-2% tolerance.
KBU808G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
FS1D JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 200V.
SMAJ33C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. Bidirectional.
1N984B JGD0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-5% tolerance.
HER308G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V.
1N5397 JGD1.5 A, silicon rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V.
SMBJ45C JGDSurface mount transient voltage suppressor. Breakdown voltage 50.0 V (min), 61.1 V (max). Test current 1.0 mA. Bidirectional.
3EZ39D10 JGD3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-10% tolerance.
SMAJ7.0CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional.
1N959A JGD0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-10% tolerance.
1N4002G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 100V.
SFA12G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
1N5946A JGD1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance.
HER154 JGD1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V.
ZMM55-A3V0 JGDSurface mount zener diode, 500mW. Nominal zener voltage 2.8-3.3 V. Test current 5 mA. +-1% tolerance.
1N4007 JGD1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V.
3EZ8.2D10 JGD3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-10% tolerance.
SMAJ48A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V.
P6KE8.2A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V.
P4KE15CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 15 V. Bidirectional.
1N4622 JGD500mW low noise silicon zener diode. Nominal zener voltage 3.9V.
1N5399 JGD1.5 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V.
1N976 JGD0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-20% tolerance.
ZMM55-A3V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-1% tolerance.
FS2K JGD1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 800V.
1N4128 JGD500mW low noise silicon zener diode. Nominal zener voltage 60V.

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