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25A 1N5530 SMBJ24A 3EZ16D5 SMBJ5946D MMBZ5226B KBL401 ZMM5239C P4KE130A 3EZ4.3D1 KBPC808 1N4102 2W02 1A6 SMAJ11C SMBJ5944 3EZ16D2 1N4746A P4KE250C SMBJ5919A 1N5526B ZMM55-B6V8 SMAJ150CA 1N5533B 3EZ75D4 3EZ18D4 ZMM5222C BY253

JGD dataark Catalog-62

Part NoProdusentApplikasjon
UF4004 JGDUltra fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A.
1N4626D JGD500mW low noise silicon zener diode. Nominal zener voltage 5.6V. 1% tolerance.
ZMM5225A JGDSurface mount zener diode. Nominal zener voltage 3.0 V. Test current 20 mA. +-3% tolerance.
1N5530 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-20% tolerance.
SMBJ24A JGDSurface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 29.5 V (max). Test current 1.0 mA.
3EZ16D5 JGD3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-5% tolerance.
SMBJ5946D JGD1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance.
MMBZ5226B JGDSurface mount zener diode. Nominal zener voltage 3.3V, test current 20.0mA.
KBL401 JGDSingle-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V.
ZMM5239C JGDSurface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-10% tolerance.
P4KE130A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V.
3EZ4.3D1 JGD3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-1% tolerance.
KBPC808 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
1N4102 JGD500mW low noise silicon zener diode. Nominal zener voltage 8.7V.
2W02 JGDSingle phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200 V.
1A6 JGD1.0 A silicon rectifier. Max recurrent peak reverse voltage 800 V.
SMAJ11C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. Bidirectional.
SMBJ5944 JGD1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance.
3EZ16D2 JGD3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-2% tolerance.
1N4746A JGD1W zener diode. Zener voltage 18V.
P4KE250C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional.
SMBJ5919A JGD1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-10% tolerance.
1N5526B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-5% tolerance.
ZMM55-B6V8 JGDSurface mount zener diode, 500mW. Nominal zener voltage 6.4-7.2 V. Test current 5 mA. +-2% tolerance.
SMAJ150CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. Bidirectional.
1N5533B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-5% tolerance.
3EZ75D4 JGD3 W, silicon zener diode. Nominal voltage 75 V, current 10 mA, +-4% tolerance.
3EZ18D4 JGD3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-4% tolerance.
ZMM5222C JGDSurface mount zener diode. Nominal zener voltage 2.5 V. Test current 20 mA. +-10% tolerance.
BY253 JGD3.0 A silicon rectifier. Max recurrent peak reverse voltage 600 V.

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