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J30A SMAJ11CA 1N5946C P6KE24 MMBZ5255B KBPC1006G 1N4936 1N979 P6KE9.1C 3EZ28D 3EZ6.2D2 BY550-50 1N960D 1N4117 HER602G SMBJ8.5CA 1N5936 ZMM5230A 1N987B 1N5926B 1A4G 1N4623C SMBJ5934A ZMM55-D6V2 1N4762C 1N4106 MUR120 SMAJ8.5A

JGD dataark Catalog-65

Part NoProdusentApplikasjon
ZMM5260D JGDSurface mount zener diode. Nominal zener voltage 43 V. Test current 3 mA. +-20% tolerance.
P4KE43A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V.
SMAJ30A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V.
SMAJ11CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. Bidirectional.
1N5946C JGD1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance.
P6KE24 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V.
MMBZ5255B JGDSurface mount zener diode. Nominal zener voltage 28.0V, test current 4.5mA.
KBPC1006G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V.
1N4936 JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.
1N979 JGD0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-20% tolerance.
P6KE9.1C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. Bidirectional.
3EZ28D JGD3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-20% tolerance.
3EZ6.2D2 JGD3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance.
BY550-50 JGD5.0 A silicon rectifier. Max recurrent peak reverse voltage 50 V.
1N960D JGD0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-1% tolerance.
1N4117 JGD500mW low noise silicon zener diode. Nominal zener voltage 25V.
HER602G JGD6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V.
SMBJ8.5CA JGDSurface mount transient voltage suppressor. Breakdown voltage 9.44 V (min), 10.4 V (max). Test current 1.0 mA. Bidirectional.
1N5936 JGD1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-20% tolerance.
ZMM5230A JGDSurface mount zener diode. Nominal zener voltage 4.7 V. Test current 20 mA. +-3% tolerance.
1N987B JGD0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-5% tolerance.
1N5926B JGD1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-5% tolerance.
1A4G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 400V.
1N4623C JGD500mW low noise silicon zener diode. Nominal zener voltage 4.3V. 2% tolerance.
SMBJ5934A JGD1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-10% tolerance.
ZMM55-D6V2 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-20% tolerance.
1N4762C JGD1W zener diode. Nominal zener voltage 82V. 2% tolerance.
1N4106 JGD500mW low noise silicon zener diode. Nominal zener voltage 12V.
MUR120 JGD1.0A ultra fast rectifier. Max recurrent peak reverse voltage 200V.
SMAJ8.5A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.5 V.

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