Path:okDatasheet > Semiconductor Datasheet > Leshan Radio Datasheet > Leshan Radio-15

MBZ5251BLT1 1N5224B RB151 1A6 R3000 MMBT5551LT1 MMUN2213LT1 BC857CDW1T1 HVM12 DF101-S 1N4934G BZX84C18LT1 1N5246A 1.5KE400 MTZJ27B BZX84C2V4LT1 P6KE47A 05WS20 FR202 MTZJ20D BB143 1N747D 1N966C BR68 MMBT5550LT1 P6KE110A MBT3946DW1T1 1N4936G

Leshan Radio dataark Catalog-15

Part NoProdusentApplikasjon
1N4002 Leshan Radio100 V, 1 A general diode
BZX84C33LT1 Leshan Radio33 V, 225 mW, semiconductor
MMBZ5251BLT1 Leshan Radio22 V, 5.6 mA, 225 mW, semiconductor
1N5224B Leshan Radio2.8 V, 20 mA, zener diode
RB151 Leshan Radio100 V, 1.5 A, bridge rectifier
1A6 Leshan Radio800 V, 1 A general diode
R3000 Leshan Radio3000 V, 0.2 A high voltage diode
MMBT5551LT1 Leshan Radio140 V, high voltage transistor
MMUN2213LT1 Leshan Radio50 V, bias resistor transistor
BC857CDW1T1 Leshan Radio45 V, dual general purpose transistor
HVM12 Leshan Radio12000 V, 350 mA, high-voltage rectifier
DF101-S Leshan Radio50 V, 1 A, bridge rectifier
1N4934G Leshan Radio100 V, 1 A, fast GPP diode
BZX84C18LT1 Leshan Radio18 V, 225 mW, semiconductor
1N5246A Leshan Radio16 V, 7.8 mA, zener diode
1.5KE400 Leshan Radio400 V, 1 mA, 1500 W, transient voltage suppressor
MTZJ27B Leshan Radio27 V, 5 mA, zener diode
BZX84C2V4LT1 Leshan Radio2.4 V, 225 mW, semiconductor
P6KE47A Leshan Radio47 V, 1 mA, 600 W, transient voltage suppressor
05WS20 Leshan Radio400 mW, 5 mA, zener diode
FR202 Leshan Radio100 V, 2 A, fast recovery diode
MTZJ20D Leshan Radio20 V, 5 mA, zener diode
BB143 Leshan Radio6 V, low voltage variable capacitance diode
1N747D Leshan Radio3.6 V, 20 mA, zener diode
1N966C Leshan Radio16 V, zener diode
BR68 Leshan Radio800 V, 6 A, bridge rectifier
MMBT5550LT1 Leshan Radio140 V, high voltage transistor
P6KE110A Leshan Radio110 V, 1 mA, 600 W, transient voltage suppressor
MBT3946DW1T1 Leshan Radio60 V, dual general purpose transistor
1N4936G Leshan Radio400 V, 1 A, fast GPP diode

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