Path:okDatasheet > Semiconductor Datasheet > Leshan Radio Datasheet > Leshan Radio-27

14A 1N971A W02 1SS133 1N5393G 1N759D SMAJ75A 1N755B BB182B MMBV2109LT1 1S1555 KBL407 05W1C 1N5262D BC847ALT1 1N756B 1N974C 1N5402G MMBZ5225BLT1 MM3Z3V6T1 1N757B 1N5235C 1N5402 P6KE36 EFM104 HER207 1N964A P4KE180

Leshan Radio dataark Catalog-27

Part NoProdusentApplikasjon
1N4736B Leshan Radio6.8 V, zener diode
MUN2113T1 Leshan Radio50 V, bias resistor transistor
SA14A Leshan Radio14 V, 1 mA, 500 W, transient voltage suppressor
1N971A Leshan Radio27 V, zener diode
W02 Leshan Radio200 V, 1.5 A, WOM bridge rectifier
1SS133 Leshan Radio90 V, switching diode
1N5393G Leshan Radio200 V, 1.5 A, general purpose GPP diode
1N759D Leshan Radio12 V, 20 mA, zener diode
SMAJ75A Leshan Radio75 V, 1 mA, transient voltage suppressor
1N755B Leshan Radio7.5 V, 20 mA, zener diode
BB182B Leshan Radio34 V, VHF variable capacitance diode
MMBV2109LT1 Leshan Radio30 V, silicon tuning diode
1S1555 Leshan Radio35 V, switching diode
KBL407 Leshan Radio1000 V, 4 A, bridge rectifier
05W1C Leshan Radio500 mW, 5 mA, zener diode
1N5262D Leshan Radio51 V, 2.5 mA, zener diode
BC847ALT1 Leshan Radio45 V, general purpose transistor
1N756B Leshan Radio8.2 V, 20 mA, zener diode
1N974C Leshan Radio36 V, zener diode
1N5402G Leshan Radio200 V, 3 A, general purpose GPP diode
MMBZ5225BLT1 Leshan Radio3 V, 20 mA, 225 mW, semiconductor
MM3Z3V6T1 Leshan Radio3.6 V, 5 mA, 200 mW, zener voltage regulator
1N757B Leshan Radio9.1 V, 20 mA, zener diode
1N5235C Leshan Radio6.8 V, 20 mA, zener diode
1N5402 Leshan Radio200 V, 3 A general diode
P6KE36 Leshan Radio36 V, 1 mA, 600 W, transient voltage suppressor
EFM104 Leshan Radio200 V, 1 A, fast recovery SMA diode
HER207 Leshan Radio800 V, 2 A, high efficiency diode
1N964A Leshan Radio13 V, zener diode
P4KE180 Leshan Radio180 V, 1 mA, 400 W, transient voltage suppressor

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