Path:okDatasheet > Semiconductor Datasheet > Leshan Radio Datasheet > Leshan Radio-6

1.5KE10 1N5254A 1N5230A 1N4751B BC857BWT1 P4KE150 BZX84C62LT1 MMBZ5240BLT1 1N992A P4KE68A 1N746C MMBZ5261BLT1 MMBV809LT1 BAS21LT1 1N5252C SF13 1N5398 SMAJ33A MMBZ5222BLT1 FR152 MUN2234RT1 1N4001G RBV408G MC74VHC1G01DFT4 1N4743A 1N4003E 1N746A 1N5272C

Leshan Radio dataark Catalog-6

Part NoProdusentApplikasjon
MUN5313DW1T1 Leshan Radio50 V, dual bias resistor transistor
1N4744A Leshan Radio15 V, zener diode
1.5KE10 Leshan Radio10 V, 1 mA, 1500 W, transient voltage suppressor
1N5254A Leshan Radio27 V, 4.6 mA, zener diode
1N5230A Leshan Radio4.7 V, 20 mA, zener diode
1N4751B Leshan Radio30 V, zener diode
BC857BWT1 Leshan Radio45 V, general purpose transistor
P4KE150 Leshan Radio150 V, 1 mA, 400 W, transient voltage suppressor
BZX84C62LT1 Leshan Radio62 V, 225 mW, semiconductor
MMBZ5240BLT1 Leshan Radio10 V, 20 mA, 225 mW, semiconductor
1N992A Leshan Radio200 V, zener diode
P4KE68A Leshan Radio68 V, 1 mA, 400 W, transient voltage suppressor
1N746C Leshan Radio3.3 V, 20 mA, zener diode
MMBZ5261BLT1 Leshan Radio47 V, 2.7 mA, 225 mW, semiconductor
MMBV809LT1 Leshan Radio20 V, silicon tuning diode
BAS21LT1 Leshan Radio250 V, 200 mA, high voltage switching diode
1N5252C Leshan Radio24 V, 5.2 mA, zener diode
SF13 Leshan Radio150 V, 1 A, super fast diode
1N5398 Leshan Radio800 V, 1.5 A general diode
SMAJ33A Leshan Radio33 V, 1 mA, transient voltage suppressor
MMBZ5222BLT1 Leshan Radio2.5 V, 20 mA, 225 mW, semiconductor
FR152 Leshan Radio100 V, 1.5 A, fast recovery diode
MUN2234RT1 Leshan Radio50 V, bias resistor transistor
1N4001G Leshan Radio50 V, 1 A, general purpose GPP diode
RBV408G Leshan Radio800 V, 4 A, bridge rectifier
MC74VHC1G01DFT4 Leshan Radio2-input NAND gate
1N4743A Leshan Radio13 V, zener diode
1N4003E Leshan Radio200 V, 1 A general diode
1N746A Leshan Radio3.3 V, 20 mA, zener diode
1N5272C Leshan Radio110 V, 1.1 mA, zener diode

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