Path:okDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-12

E110 SMCJ8.0 1.5KE13 SMAJ8.0 SA15A 3KP18A SMBJ7.5A 5KP6.0 MDE-25S561K SMCJ20A 1.5KE6.8.0A SMDJ5.0A SAC6.0 LCE11 15KW58 MDE-53D621K 5KP43A MDE-25D951K 3KP18 SMAJ90 20KW80A MAX40-8.0C SMDJ10A SMAJ15A 3KP15 P6KE160 MDE-10D220M 20KW40A

MDE Semiconductor dataark Catalog-12

Part NoProdusentApplikasjon
SMDJ6.5 MDE Semiconductor6.50V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ7.0A MDE Semiconductor7.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE110 MDE Semiconductor89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMCJ8.0 MDE Semiconductor8.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE13 MDE Semiconductor10.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SMAJ8.0 MDE Semiconductor8.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SA15A MDE Semiconductor15.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3KP18A MDE Semiconductor18.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMBJ7.5A MDE Semiconductor7.50V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
5KP6.0 MDE Semiconductor6.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-25S561K MDE Semiconductor560V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
SMCJ20A MDE Semiconductor20.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE6.8.0A MDE Semiconductor5.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMDJ5.0A MDE Semiconductor5.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SAC6.0 MDE Semiconductor6.00V; 41.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode
LCE11 MDE Semiconductor11.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
15KW58 MDE Semiconductor58.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE-53D621K MDE Semiconductor620V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc
5KP43A MDE Semiconductor43.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-25D951K MDE Semiconductor950V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc
3KP18 MDE Semiconductor18.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMAJ90 MDE Semiconductor90.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
20KW80A MDE Semiconductor80.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MAX40-8.0C MDE Semiconductor8.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ10A MDE Semiconductor10.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ15A MDE Semiconductor15.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
3KP15 MDE Semiconductor15.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P6KE160 MDE Semiconductor130.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-10D220M MDE Semiconductor22V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc
20KW40A MDE Semiconductor40.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 >>