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8 SMAJ58 P6KE180A P4KE6.8 SMLJ64 MAX20-54.0C 3KP30A 15KP64 LCE16 20KW20 SMBJ8.0A SMDJ64A SMLJ70 SMLJ170A P6KE9.1 MDE-25S911K MDE-5D391K P4KE91 MDE-20D151K MDE-20D471K SMBJ15 SMAJ75 MAX20-14.0CA MAX40-45.0C SMBJ24A SMAJ48A MAX40-36.0CA SA100A

MDE Semiconductor dataark Catalog-13

Part NoProdusentApplikasjon
15KW75 MDE Semiconductor75.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
15KP260 MDE Semiconductor260V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMAJ28 MDE Semiconductor28.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ58 MDE Semiconductor58.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P6KE180A MDE Semiconductor154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE6.8 MDE Semiconductor5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMLJ64 MDE Semiconductor64.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX20-54.0C MDE Semiconductor54.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
3KP30A MDE Semiconductor30.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
15KP64 MDE Semiconductor64V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
LCE16 MDE Semiconductor16.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
20KW20 MDE Semiconductor20.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMBJ8.0A MDE Semiconductor8.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ64A MDE Semiconductor64.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ70 MDE Semiconductor70.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMLJ170A MDE Semiconductor170.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P6KE9.1 MDE Semiconductor7.37V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-25S911K MDE Semiconductor910V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
MDE-5D391K MDE Semiconductor390V; max peak current800A; metal oxide varistor. Standard D series 5mm disc
P4KE91 MDE Semiconductor73.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-20D151K MDE Semiconductor150V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc
MDE-20D471K MDE Semiconductor470V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc
SMBJ15 MDE Semiconductor15.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ75 MDE Semiconductor75.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX20-14.0CA MDE Semiconductor14.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MAX40-45.0C MDE Semiconductor45.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ24A MDE Semiconductor24.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ48A MDE Semiconductor48.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX40-36.0CA MDE Semiconductor36.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SA100A MDE Semiconductor100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications

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