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-12 20KW172A P4KE300 MPTE-10C MDE-34S621K 15KP40 LCE16A SMLJ130A 15KW45A P4KE160 SMBJ13A SMAJ30A 1.5KE160A SA13 SA64A MAX20-90.0C SMBJ26A P4KE300A 3KP13A P4KE56A 30KW258 SA24 30KW240 MDE-34S241K LCE9.0 15KP24A P6KE200 15KP17A

MDE Semiconductor dataark Catalog-24

Part NoProdusentApplikasjon
1.5KE10A MDE Semiconductor8.55V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMBJ24 MDE Semiconductor24.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
ICTE-12 MDE Semiconductor12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
20KW172A MDE Semiconductor172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P4KE300 MDE Semiconductor243.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MPTE-10C MDE Semiconductor10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MDE-34S621K MDE Semiconductor620V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square
15KP40 MDE Semiconductor40.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
LCE16A MDE Semiconductor16.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
SMLJ130A MDE Semiconductor130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
15KW45A MDE Semiconductor45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P4KE160 MDE Semiconductor130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ13A MDE Semiconductor13.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ30A MDE Semiconductor30.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE160A MDE Semiconductor136.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SA13 MDE Semiconductor13.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA64A MDE Semiconductor64.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MAX20-90.0C MDE Semiconductor90.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ26A MDE Semiconductor26.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE300A MDE Semiconductor256.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3KP13A MDE Semiconductor13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P4KE56A MDE Semiconductor47.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
30KW258 MDE Semiconductor258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SA24 MDE Semiconductor24.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
30KW240 MDE Semiconductor240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-34S241K MDE Semiconductor240V; max peak current40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square
LCE9.0 MDE Semiconductor9.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
15KP24A MDE Semiconductor24.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P6KE200 MDE Semiconductor162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
15KP17A MDE Semiconductor17.0V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor

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