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1.5KE43 SAC26 MAX20-7.0C SMBJ54A MDE-40D102K MDE-25S681K 15KW85 P6KE56A 5KP6.0A P4KE7.5 5KP28A P4KE150 5KP9.0A SA14 MDE-25S221K P4KE16A SA33 MDE-32D301K MDE-10D911K SMBJ18A 1.5KE24A SMAJ26A 15KP130A 15KP45A MPTE-45C SMDJ15A 20KW52

MDE Semiconductor dataark Catalog-31

Part NoProdusentApplikasjon
SA18A MDE Semiconductor18.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
LCE6.5A MDE Semiconductor6.50V; 10mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
5KP6.5 MDE Semiconductor6.50V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
1.5KE43 MDE Semiconductor34.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SAC26 MDE Semiconductor26.00V; 11.1A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode
MAX20-7.0C MDE Semiconductor7.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ54A MDE Semiconductor54.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-40D102K MDE Semiconductor1000V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc
MDE-25S681K MDE Semiconductor680V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
15KW85 MDE Semiconductor85.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
P6KE56A MDE Semiconductor47.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
5KP6.0A MDE Semiconductor6.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P4KE7.5 MDE Semiconductor6.05V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
5KP28A MDE Semiconductor28.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P4KE150 MDE Semiconductor121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
5KP9.0A MDE Semiconductor9.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SA14 MDE Semiconductor14.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-25S221K MDE Semiconductor220V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
P4KE16A MDE Semiconductor12.90V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA33 MDE Semiconductor33.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-32D301K MDE Semiconductor300V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc
MDE-10D911K MDE Semiconductor910V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
SMBJ18A MDE Semiconductor18.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE24A MDE Semiconductor20.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMAJ26A MDE Semiconductor26.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
15KP130A MDE Semiconductor130V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
15KP45A MDE Semiconductor45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MPTE-45C MDE Semiconductor45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SMDJ15A MDE Semiconductor15.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
20KW52 MDE Semiconductor52.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor

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