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0-78.0CA MAX40-22.0CA SMBJ110 20KW204A ICTE-36 SMLJ60 MAX40-58.0C ICTE-45 30KW30 MAX20-22.0C 1.5KE220A MAX40-100.0CA ICTE-8 SMLJ11 SMDJ75 15KW170 MDE-20D681K P6KE75A MDE-5D330K P4KE22A SMCJ8.0A 5KP9.0 MAX20-18.0CA MAX40-78.0C 30KW258A 1.5KE39A SAC8.0 MAX20-24.0C

MDE Semiconductor dataark Catalog-9

Part NoProdusentApplikasjon
SMAJ36A MDE Semiconductor36.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE10A MDE Semiconductor8.55V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MAX40-78.0CA MDE Semiconductor78.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MAX40-22.0CA MDE Semiconductor22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ110 MDE Semiconductor110.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
20KW204A MDE Semiconductor204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
ICTE-36 MDE Semiconductor36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SMLJ60 MDE Semiconductor60.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX40-58.0C MDE Semiconductor58.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
ICTE-45 MDE Semiconductor45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
30KW30 MDE Semiconductor30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX20-22.0C MDE Semiconductor22.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE220A MDE Semiconductor185.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MAX40-100.0CA MDE Semiconductor100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
ICTE-8 MDE Semiconductor8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SMLJ11 MDE Semiconductor11.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ75 MDE Semiconductor75.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
15KW170 MDE Semiconductor170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE-20D681K MDE Semiconductor680V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc
P6KE75A MDE Semiconductor64.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-5D330K MDE Semiconductor33V; max peak current250A; metal oxide varistor. Standard D series 5mm disc
P4KE22A MDE Semiconductor18.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMCJ8.0A MDE Semiconductor8.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
5KP9.0 MDE Semiconductor9.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX20-18.0CA MDE Semiconductor18.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MAX40-78.0C MDE Semiconductor78.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
30KW258A MDE Semiconductor258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
1.5KE39A MDE Semiconductor33.30V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SAC8.0 MDE Semiconductor8.00V; 36.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode
MAX20-24.0C MDE Semiconductor24.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications

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