Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Produsent : NTE Electronic
Emballasje :
Pins : 3
Temperatur : Min 0 °C | Max 150 °C
Størrelse : 19 KB
Applikasjon : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.