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F1107 Lignende

  • F1107
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1108
    • 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1107 Datasheet og Spec

Produsent : Polyfet RF 

Emballasje :  

Pins : 4 

Temperatur : Min -65 °C | Max 150 °C

Størrelse : 42 KB

Applikasjon : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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