Path:OKDatasheet > Semiconductor Datasheet > Polyfet RF Datasheet > F5001
F5001 spec: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Semiconductor Datasheet > Polyfet RF Datasheet > F5001
F5001 spec: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Produsent : Polyfet RF
Emballasje :
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Størrelse : 40 KB
Applikasjon : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor