F5001 spec: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Lignende

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet og Spec

Produsent : Polyfet RF

Emballasje :

Pins : 2

Temperatur : Min -65 °C | Max 150 °C

Størrelse : 40 KB

Applikasjon : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor