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LP701 spec: 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 Lignende
- LP701
- 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 Datasheet og Spec
Produsent : Polyfet RF
Emballasje :
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Størrelse : 38 KB
Applikasjon : 35 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP701 PDF Last ned