Path:OKDatasheet > Semiconductor Datasheet > Polyfet RF Datasheet > LP801
LP801 spec: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP801 Datasheet og Spec
Produsent : Polyfet RF
Emballasje :
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Størrelse : 38 KB
Applikasjon : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP801 PDF Last ned