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CRF-22010-001 spec: 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-001 Lignende
- CRF-22010-001
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-101
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
CRF-22010-001 Datasheet og Spec
Produsent : Cree
Emballasje :
Pins : 2
Temperatur : Min -30 °C | Max 120 °C
Størrelse : 157 KB
Applikasjon : 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-001 PDF Last ned