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BC261 spec: 360mW PNP high gain low noise silicon planar epitaxial transistor

BC261 Lignende

BC261
- 360mW PNP high gain low noise silicon planar epitaxial transistor
BC262
- 360mW PNP high gain low noise silicon planar epitaxial transistor
BC263
- 360mW PNP high gain low noise silicon planar epitaxial transistor

BC261 Datasheet og Spec

Produsent : Micro Electronics

Emballasje : TO-18

Pins : 3

Temperatur : Min -65 °C | Max 200 °C

Størrelse : 103 KB

Applikasjon : 360mW PNP high gain low noise silicon planar epitaxial transistor

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