Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTB3N120E
MTB3N120E spec: TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E Lignende
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB3N120E Datasheet og Spec
Produsent : Motorola
Emballasje : DPAK
Pins : 4
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 354 KB
Applikasjon : TMOS E-FET high energy power FET D2PAK for surface mount
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