Path:OKDatasheet > Semiconductor Datasheet > Motorola Datasheet > MTB52N06V
MTB52N06V spec: TMOS V power field effect transistor D2PAK for surface mount
MTB52N06V Lignende
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB52N06V Datasheet og Spec
Produsent : Motorola
Emballasje : DPAK
Pins : 4
Temperatur : Min -55 °C | Max 175 °C
Størrelse : 217 KB
Applikasjon : TMOS V power field effect transistor D2PAK for surface mount
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