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MTD1N50E spec: TMOS E-FET power field effect transistor D2PAK for surface mount
MTD1N50E Lignende
- MTD1302
- HDTMOS E-FET high dansity power FET D2PAK for surface mount
- MTD15N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD15N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD1N50E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N60E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1N80E
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTD1P50E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTD1N50E Datasheet og Spec
Produsent : Motorola
Emballasje : DPAK
Pins : 4
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 293 KB
Applikasjon : TMOS E-FET power field effect transistor D2PAK for surface mount
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