MTD3055V Lignende

  • MTD3055EL
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055EL1
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3302
    • HDTMOS single N-channel field effect transistor

MTD3055V Datasheet og Spec

Produsent : Motorola 

Emballasje : DPAK 

Pins : 4 

Temperatur : Min -55 °C | Max 175 °C

Størrelse : 226 KB

Applikasjon : TMOS V power field effect transistor D2PAK for surface mount 

MTD3055V PDF Last ned