Path:OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE363
NTE363 spec: Silicon NPN transistor. RF power output, Po = 4W.
NTE363 Lignende
- NTE30
- Silicon complementary PNP transistor. High power, high current switch.
- NTE300
- Silicon complementary NPN transistor. Audio power amplifier.
- NTE3000
- Light emitting diode miniature, clear red.
- NTE30001
- Infrared emitting diode bi-directional.
- NTE3001
- Light emitting diode miniature, diffused red.
- NTE3007
- Discrete LED indicator. Diffused red, gallium arsenide phosphide red.
- NTE3008
- Discrete LED indicator. Diffused bright red, gallium phosphide on gallium phosphide red.
- NTE3009
- Discrete LED indicator. Diffused orange, gallium arsenide phosphide on gallium phosphide orange.
NTE363 Datasheet og Spec
Produsent : NTE Electronic
Emballasje :
Pins : 4
Temperatur : Min 0 °C | Max 200 °C
Størrelse : 25 KB
Applikasjon : Silicon NPN transistor. RF power output, Po = 4W.
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