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PHB2N60E spec: 600 V, power MOS transistor avalanche energy rated
PHB2N60E Lignende
- PHB20N06T
- 55 V, N-channel trenchMOS transistor
- PHB20NQ20T
- 200 V, N-channel trenchMOS transistor
- PHB20NQ20T
- N-channel TrenchMOS transistor
- PHB21N06LT
- TrenchMOS transistor. Logic level FET.
- PHB21N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB21N06T
- TrenchMOS transistor Standard level FET
- PHB23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHB23NQ10T
- N-channel TrenchMOS transistor
PHB2N60E Datasheet og Spec
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 83 KB
Applikasjon : 600 V, power MOS transistor avalanche energy rated
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