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PHB3N50E spec: 500 V, power MOS transistor avalanche energy rated
PHB3N50E Lignende
- PHB34NQ10T
- N-channel TrenchMOS transistor
- PHB34NQ10T
- 100 V, N-channel trenchMOS transistor
- PHB36N06E
- 60 V, power MOS transistor
- PHB36N06E
- 60 V, power MOS transistor
- PHB37N06LT
- TrenchMOS transistor. Logic level FET.
- PHB37N06LT
- TrenchMOS transistor Logic level FET
- PHB37N06LT
- 55 V, trenchMOS transistor logic level FET
- PHB37N06T
- TrenchMOS transistor Standard level FET
PHB3N50E Datasheet og Spec
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 85 KB
Applikasjon : 500 V, power MOS transistor avalanche energy rated
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