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PHB6N60E spec: 600 V, power MOS transistor avalanche energy rated
PHB6N60E Lignende
- PHB60N06LT
- TrenchMOS transistor. Logic level FET.
- PHB60N06LT
- TrenchMOS transistor Logic level FET
- PHB60N06T
- TrenchMOS transistor Standard level FET
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- Trench transistor Logic level FET
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
- PHB65N06LT
- TrenchMOS transistor. Logic level FET.
PHB6N60E Datasheet og Spec
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 81 KB
Applikasjon : 600 V, power MOS transistor avalanche energy rated
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