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PHB8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHB8ND50E Lignende
- PHB80N06LT
- TrenchMOS transistor. Logic level FET.
- PHB80N06LT
- TrenchMOS transistor Logic level FET
- PHB80N06T
- TrenchMOS transistor Standard level FET
- PHB83N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB87N03LT
- 25 V, N-channel trenchMOS transistor logic level FET
- PHB87N03LT
- TrenchMOS transistor. Logic level FET.
- PHB87N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB87N03T
- 30 V, TrenchMOS transistor standard level FET
PHB8ND50E Datasheet og Spec
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 80 KB
Applikasjon : 500 V, power MOS transistor FREDFET, avalanche energy rated
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