Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHB8ND50E
PHB8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHB8ND50E
PHB8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 80 KB
Applikasjon : 500 V, power MOS transistor FREDFET, avalanche energy rated