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PHB9N60E spec: PowerMOS transistor. Avalanche energy rated.
PHB9N60E Lignende
- PHB96NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB98N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB9N60E
- PowerMOS transistor. Avalanche energy rated.
- PHB9NQ20T
- N-channel TrenchMOS transistor
PHB9N60E Datasheet og Spec
Produsent : Philips
Emballasje : SOT404
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 45 KB
Applikasjon : PowerMOS transistor. Avalanche energy rated.
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