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PHD2N60E spec: PowerMOS transistor. Avalanche energy rated.
PHD2N60E Lignende
- PHD20N06T
- 55 V, N-channel trenchMOS transistor
- PHD21N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHD21N06LT
- TrenchMOS transistor. Logic level FET.
- PHD23NQ10T
- N-channel TrenchMOS transistor
- PHD23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHD23NQ10T
- N-channel TrenchMOS transistor
- PHD24N03LT
- TrenchMOS(TM) transistor Logic level FET
- PHD27NQ10T
- N-channel TrenchMOS transistor
PHD2N60E Datasheet og Spec
Produsent : Philips
Emballasje : SOT428
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 103 KB
Applikasjon : PowerMOS transistor. Avalanche energy rated.
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