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PHD6N10E spec: 100 V, power MOS transistor
PHD6N10E Lignende
- PHD66NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHD69N03LT
- TrenchMOS transistor. Logic level FET.
- PHD69N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHD69N03LT
- 25 V, N-channel trenchMOS transistor logic level FET
- PHD6N10E
- 100 V, power MOS transistor
- PHD6N10E
- PowerMOS transistor
PHD6N10E Datasheet og Spec
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Størrelse : 62 KB
Applikasjon : 100 V, power MOS transistor
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