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PHW8ND50E spec: 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Lignende
- PHW80NQ10T
- 100 V, N-channel trenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW80NQ10T
- N-channel TrenchMOS transistor
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- PowerMOS transistor. Avalanche energy rated.
- PHW8N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW8ND50E
- 500 V, power MOS transistor FREDFET, avalanche energy rated
PHW8ND50E Datasheet og Spec
Produsent : Philips
Emballasje : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 80 KB
Applikasjon : 500 V, power MOS transistor FREDFET, avalanche energy rated
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