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PHX2N50E spec: PowerMOS transistor. Avalanche energy rated.
PHX2N50E Lignende
- PHX23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHX2N40E
- 400 V, power MOS transistor isolated version of PHP4N40E
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- PowerMOS transistor. Avalanche energy rated.
PHX2N50E Datasheet og Spec
Produsent : Philips
Emballasje : SOT186A
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Størrelse : 85 KB
Applikasjon : PowerMOS transistor. Avalanche energy rated.
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