Path:OKDatasheet > Semiconductor Datasheet > UTMC Datasheet > UT7Q512
UT7Q512 spec: 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512 Lignende
- UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
- UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
- UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
- UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
- UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
- UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
- UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
- UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512 Datasheet og Spec
Produsent : UTMC
Emballasje : FlatPack
Pins : 32
Temperatur : Min 0 °C | Max 0 °C
Størrelse : 16 KB
Applikasjon : 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512 PDF Last ned